DESCRIPTION:
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage(VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V(maximum). At VGG=5V, the typical gate current is 1 mA.
FEATURES:
• Enhancement- Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>55W, ηT>43% @ f=440-490MHz,
Pout>45W, ηT>35% @ f=491-520MHz,
VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RoHS COMPLIANCE:
• RA55H4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter "G" after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts
