RA30H3340M
Specifications
1. Power RF MITSUBISHI Module MOSFET
2. Frequency Range: 330-400MHz
3. Output Power: 30W
4. Module Size: 66 x 21 x 9.88 mm
Silicon RF Power Semiconductors
High Frequency Devices
Si RF MITSUBISHI Module MOSFET
High Output Power Si MOS FET Module
UHF 300-500MHz / High Power
FEATURES
1 | Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V) |
2 | Pout > 30W , ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW |
3 | Broadband Frequency Range: 330-400MHz |
4 | Low-Power Control Current IGG = 1mA (typ) at VGG = 5V |
5 | Module Size: 66 x 21 x 9.88 mm |
6 | Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power |
