InGaAs APD FOR OTDR
Features
1. Small Dark Current:ID = 2 nA
2. Small Terminal Capacitance:CT = 0.35 pF at 0.9 VBR
3. High Quantum Efficiency:
η = 90% at λ = 1310 nm, M = 1 η = 77% at λ = 1550 nm, M = 1
4. High Speed Response :fc = 2.5 GHz at M = 10
5. Detecting Area Size:50um
6. Coaxial Module With Single Mode Fiber (SM-9/125)
Applications
OTDR System/Other Sensing Probe
Absolute Maximum Ratings
Parameter | Symbol | Min. | Typ. | Max. | Unit |
Forward Current | IF |
|
| 10 | mA |
Reverse Current | IR |
|
| 0.5 | mA |
Operating Case Temp. | TC | -40 |
| 85 | °C |
Storage Temperature | TSTG | -40 |
| 85 | °C |
Lead Soldering Temp. | TSOL | - |
| 260(10s) | °C |
Relative Humidity | RH | 0 |
| 85 | % |
Optical & Electrical Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
Reverse Breakdown Voltage | VBR | 40 | 45 | 55 | V | ID = 100 μA |
Temperature Coefficient of | δ |
| 0.2 |
| %/°C |
|
Dark Current | ID |
| 5 | 25 | nA | VR = VBR x 0.9 |
Multiplied Dark Current | IDM |
| 1 | 3 | nA | M = 2 to 10 |
Terminal Capacitance | Ct |
| 0.35 |
| pF | VR = VBR x 0.9, f = 1 MHz |
Cut-off Frequency | fC | 2.5 |
|
| GHz | M = 10 |
Quantum Efficiency | η | 76 | 90 |
| % | λ = 1310 nm, M = 1 |
65 | 77 |
| λ = 1550 nm, M = 1 | |||
Responsivity | S | 0.85 | 0.90 |
| A/W | λ = 1310 nm, M = 1 |
0.90 | 0.95 |
| λ = 1550 nm, M = 1 | |||
Excess Noise Factor | X |
| 0.7 |
| - | λ = 1310 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, |
F |
| 5 |
| λ = 1550 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, | ||
Optical Return Loss | ORL | 30 | 40 |
| dB | SMF |
Pin Assignment
Drawing
Order Information
MAP-3XXX
M | AP | -3 | X | X | X |
Mode | Product Type | Bandwidth | Connector | Fiber Type | Pigtail Length |
|
| 3:3Gb/s | 1:FC/APC | S9:9/125/900um | 05:0.5M |
