1.60mm Round Subminiature Infrared Light Emitting Diode Blue Chip

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SMD LED Emitting Diodes Technical Data Sheet

 

Features:

  1. Infrared light emitting diode.
  2. Low forward voltage.
  3. Wide Side Viewing Angle.
  4. Reliable and rugged


Descriptions:

  1. The device is spectrally matched with silicon photodiode, phototransistor and infrared receiver module.


Applications:

  1. Floppy disk drive.
  2. Optoelectronic switch.
  3. Camera.
  4. VCR.
  5. Video.
  6. Smoke detector.
  7. Infrared applied system.
  8. Free air transmission system.
  9. Infrared remote control units.

 

Part No. Chip Material Lens Color Source Color
DL-PCB160BC InGaN Water Clear Blue

 

 

 

 

 

 

 

Absolute Maximum Ratings at Ta=25

Parameters Symbol Max. Unit
Power Dissipation PD 100 mW

Peak Forward Current

(1/10 Duty Cycle, 0.1ms Pulse Width)

IFP 100 mA
Forward Current IF 25 mA
Reverse Voltage VR 5 V
Electrostatic Discharge (HBM) ESD 400 V
Operating Temperature Range Topr -40 to +80
Storage Temperature Range Tstg -40 to +85
Soldering Temperature Tsld 260 for 5 Seconds
 

Electrical Optical Characteristics at Ta=25

Parameters Symbol Min. Typ. Max. Unit Test Condition
Luminous Intensity * IV 90 150 --- mcd IF=20mA (Note 1)
Viewing Angle * 2θ1/2 --- 40 --- Deg IF=20mA (Note 2)
Peak Emission Wavelength λp --- 468 --- nm IF=20mA
Dominant Wavelength λd --- 470 --- nm IF=20mA (Note 3)
Spectral Line Half-Width λ --- 25 --- nm IF=20mA
Forward Voltage VF 2.80 3.50 4.00 V IF=20mA
Reverse Current IR --- --- 10 µA VR=5V
 

 

Notes:

1. Luminous Intensity Measurement allowance is ± 10%.

2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

3. The dominant wavelength (λd) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device

 

 

 Package Dimension:


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HongKong Double Light Electronics Technology Co. Ltd
7-G,Duhui 100 building,No.4 Zhonghang Road, Shenzhen, Guangdong, China (Mainland)
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