CATV GSM And RF Module Butterfly Laser Diode 1653nm For Optical measuring instrumentation

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1650nm butterfly laser diode

 

Features

 

1. Low threshold current and low operating current

2. High output power

3. Industry-standard 14-pin Butterfly package

4. Multiple Quantum Well (MQW) Distributed Feedback (DFB) Laser

5. Low capacitance and low dark current

 

Applications

 

1. Optical measuring instrumentation

2. Optical gas and chemical sensor

 

 

Absolute Maximum Ratings

 

  Parameter

Symbol

Condition

Min.

Max.

Unit

Reverse Voltage

VR

 

 

2

V

Forward Current

IF

 

 

120

mA

Forward Voltage

VF

IOP

 

2.5

V

Operating Temperature

TC

IOP

0

60

Storage Temperature 

TLASER

IOP

-40

85

Thermoelectric Cooler Voltage

VTEC

 

 

3.0

V

Thermoelectric Cooler Current

LTEC

 

-40

1.8

A

Storage Temperature

TSTG

Unbiased

5

85

Storage Humidity

-

 

 

85

%RH

Lead Soldering Temperature

STEMP

 

 

260

Lead Soldering Time

STIME

 

 

10

sec

 

Optical & Electrical Characteristics

 

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Optical Output Power

Po

CW

6

8

-

mW

Threshold Current

Ith

CW

-

25

35

mA

Operating Current

Iop

Po=PL, TL=25 °C

-

80

100

mA

Operation Voltage

Vop

Po=PL

-

1.2

2.0

V

Slope Efficiency

η

Po=PL, TL=25 °C

 

0.1

-

mW/mA

Peak Wavelength

λP

Po=PL, TL=25 °C

1652

1653.5

1655

nm

Side Mode Suppression

SMST

Po=PL, TL=25 °C

35

-

-

dB

Linewidth

Δλ

Po=PL, TL=25 °C

-

-

10

MHz

Thermistor Resistance

Rtherm

T=25

9.5

-

10.5

Thermistor B Constant

B

T=25

-

3900

-

k

Laser Set temperature

TL<

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Wuhan Shengshi Optical Technology Co., Ltd
5-floor,Block B Creative Building, Shaojia Tsui, Wuhan, Hubei, China (Mainland)
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