1650nm Pulse Laser For OTDR
Features
1. High output power is 30 mW @ IFP = 400mA
2. Pulse Conditions with Pulse width (PW) = 10 μs, Duty = 1%
3. Long wavelength (λC = 1650 nm)
4. Built-in monitor PD
Applications
OTDR System
Optical & Electrical Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
Forward Voltage | VFP |
|
| 3.0 | V | IFP = 400 mA, PW = 10 μs, Duty = 1% |
Threshold Current | Ith |
| 20 | 35 | mA |
|
Optical Output Power From Fiber | Pf | 30 |
|
| mW | IFP =400 mA, PW = 10 μs, Duty = 1% |
Center Wavelength | λC | 1645 | 1650 | 1655 | nm | IFP = 400 mA, PW = 10 μs, Duty = 1% |
Spectral Width | σ |
|
| 4 | nm | RMS (−3 dB) |
Rise Time | tr |
| 0.5 | 2.0 | ns | 10-90% |
Fall Time | tf |
| 0.5 | 2.0 | ns | 90-10% |
Monitor Current | Im | 0.05 |
| 2 | mA | VRM =5 V |
Absolute Maximum Ratings
Parameter | Symbol | Min. | Typical | Max. | Unit |
Pulsed Forward Current | IFP |
|
| 700 | mA |
Reverse Voltage | VR |
|
| 2 | V |
Reverse Voltage (monitor PD) | VRM |
|
| 10 | V |
Reverse Current (monitor PD) | IFPM |
|
| 2 | mA |
Operating Case Temperature | TC | 0 |
| 60 | |
Storage Temperature | Tstg | -40 |
| 85 | |
Lead Soldering Temperature | Tsld |
|
| 260(10s) | |
Relative Humidity (noncondensing) | RH |
|
| 85 | % |
Pin Description:
Package Outline
Order information
PLD-F652-XAXP30
P | LD | -F | 65 | 2 | -X | A | X | X |
Mode | Product Type | Chip | Wavelength | Bandwidth | Connector | Pin | Pigtail Length | Power Range |
|
| F:FP | 65:1650nm | 2:2.5Gb/s | 1:FC/APC | A:725 | 05:0.5m | P30:>30mW |
