Professional 1310nm Laser Diode 2.5Gb/s bandwitdth / FP Laser Diode 60mw

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60 mw 1310nm FP cheap pulse laser with 2.5Gb/s bandwitdth for OTDR
 
 
1310nm Pulse Laser For OTDR
 
Features
 
1.  Built-in/out monitor PD
2. Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%
3. High output power with 20~60 mW @ IFP = 200mA
4. Long wavelength (λC = 1310 nm)
 
Applications
 
OTDR System
 
 
Optical & Electrical Characteristics
 

Parameter

Symbol

Min.

Typ.

Max.

Unit

Notes

Forward Voltage

VFP

 

2.0

2.5

V

IFP = 200 mA, PW = 10 μs, Duty = 1% 

Threshold Current

Ith

 

20

35

mA

 

Optical Output Power From SM Fiber

Pf

20

 

50

mW

IFP =200 mA, PW = 10 μs, Duty = 1% 

Center Wavelength

λc

1290

1310

1330

nm

IFP = 200 mA, PW = 10 μs, Duty = 1% 

Spectral Width 

σ

 

 

4

nm

RMS (−3 dB) 

Rise Time 

tr

 

0.5

2.0

ns

10-90% 

Fall Time 

tf

 

0.5

2.0

ns

90-10% 

Monitor Current 

Im

0.05

 

2

mA

VRM = 5 V

 
 
Absolute Maximum Ratings

Parameter

Symbol

Min.

Typical.

Max.

Unit

Pulsed Forward Current

IFP

 

 

500

mA

Reverse Voltage

VR

 

 

2

V

Reverse Voltage (monitor PD)

VRM

 

 

10

V

Reverse Current (monitor PD)

IFPM

 

 

2

mA

Operating Case Temperature

TC

0

 

60

Storage Temperature

Tstg

-40

 

85

Lead Soldering Temperature

Tsld

 

 

260(10s)

Relative Humidity (noncondensing)

RH

 

 

85

%

 
 
Pin Description:
 

 
Package Outline
 

 
Order Information
 
PLD-F312-XAXX

P

LD

-F

31

2

-X

A

X

X

Mode

Product Type

Chip

Wavelength

Bandwidth

Connector

Pin

Pigtail Length

Power Range

 

 

F:FP

31:1310nm

2:2.5Gb/s

1:FC/APC
2:FC/PC
3:SC/APC
4:SC/PC
5:LC/PC
6:LC/APC
 

A:725

05;0.5m
10:1.0m

P20:20mW
P30:30mW
 
P60:60mW

 


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Wuhan Shengshi Optical Technology Co., Ltd
5-floor,Block B Creative Building, Shaojia Tsui, Wuhan, Hubei, China (Mainland)
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