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Features Specifications: Polysilicon Ingots
High quality Silicon Ingots 6" and 8" inch high quality ingots
Growing method: CZ
Purity: 6N at least, solar grade
Crystallinity: Mono-crystalline
Donor type / Dopant: P / Boron
Dislocation density: d3000cm-2
Orientation: 100±3°face and diagonal
Oxygen concentration: d1χ1018 atoms/cm3
Carbon concentration: d5χ1016 atoms/cm3
Resistivity: 0.5 - 3.0 ohm/cm or 3.0 - 6 ohm/cm
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Polysilicon Ingots
Polysilicon Ingots
| Price: | 1.0 USD |
|---|---|
| Payment Terms: | T/T,L/C |
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Basic Info.
- Brand Name: 0
- Specification: 0
- Function: 0
- Patent Rights: 0
- Certificate: 0
- Export Area: 0
- Cooperative Company: 0
- Place of Origin: Fujian
- Means of Transport: 0
Supply Capacity
- Production Capacity: 1
- Packing:ctns
- Delivery Date: 15-30
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