2 - 16 mw 14 Pin Butterfly 1550 nm Laser Diode For Point - To - Point

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1550nm Butterfly Laser Diode

 

 

Features

 

1. High linearity high power MQW DFB LD chip

2. Built-in isolator, TEC,hermistor and Monitor PD

3. Optimized for 2.5 Gb/s Modulation Rates

4. 14-pin butterfly cooled package

5. Single mode FC/APC connector or customized

6. Output power 2~16mW

 

 

Applications

 

CATV forward-path

1550nm broadcast and point-to-point applications

 

 

Absolute Maximum Ratings

 

Parameter

Symbol

Condition

Min.

Max.

Unit

Operating Case Temperature

Tc

I=Iop

-20

80

°C

Storage Temperature

Tstg

-

-40

85

°C

Laser Forward Current

If

-

-

150

mA

Laser Reverse Bias

Vr

-

-

2

V

Photodiode Reverse Bias

Vrpd

-

-

10

V

TEC Current

Itec

-20 °C < Tc <+65 °C,

Top=25 °C If=100 mA

-2

+2

A

TEC Voltage

Vc

 

-2.5

+2.5

V

ESD

-

ESD - HBM: R=1500

ohm, C=100 pF

-500

+500

V

Lead Solder Temperature

-

-

-

260

°C

Lead Soldering Time

-

-

-

10

S

Fiber Bend Radius

-

-

30

-

mm

Fiber Yield Strength

-

-

-

1

kgf

 

 

Optical & Electrical Characteristics

 

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Center Wavelength

λc

CW

1540

1550

1560

nm

Spectral Width (-3 dB)

Δλ

CW

-

0.5

1

nm

Optical Output Power

Po

CW, TL=25 °C

-

-

16

mW

Optical Isolation

IS

T=25 °C

30

35

-

dB

Side-mode Suppression Ratio

SMSR

CW

35

-

-

dB

Threshold Current

Ith

TL=25 °C

-

10

15

mA

Operating Current

Iop

CW

-

-

100

mA

Forward Voltage

VF

CW

-

1.2

2.0

V

Monitor Current

Imon

Vrpd=5 V

100

-

1500

μA

Monitor Dark Current

ID


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Wuhan Shengshi Optical Technology Co., Ltd
5-floor,Block B Creative Building, Shaojia Tsui, Wuhan, Hubei, China (Mainland)
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