1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led
High Power Infrared Emitting Diode
- Features:
Free air transmission system. Optoelectronic switch. Floppy disk drive. Infrared applied system. Smoke detector.
Applications:
The DL-HP10SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Descriptions: High reliability. High radiant intensity. Low forward voltage. Peak wavelength λp=850nm. The product itself will remain within RoHS compliant version.
1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED
CCTV
Wireless communication
Indoor Lighting
Outdoor Lighting
- Absolute Maximum Ratings at Ta=25
-
Parameters Symbol Max. Unit Power Dissipation PD 1000 mW Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
IFP 1.00 A Forward Current IF 350 mA Reverse Voltage VR 5 V Operating Temperature Range Topr -10 to +70 Storage Temperature Range Tstg -20 to +80 Soldering Temperature Tsld 260 for 5 Seconds Electrical Optical Characteristics at Ta=25
Parameters Symbol Min. Typ. Max. Unit Test Condition Radiant Intensity Ie 110 180 --- mW/Sr IF=350mA Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1) Peak Emission Wavelength λp --- 850 --- nm IF=350mA Spectral Bandwidth λ --- 45 --- nm IF=350mA Forward Voltage VF 1.30 1.50 1.80 V IF=350mA Reverse Current IR --- --- 50 µA VR=5V Notes:
1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.