Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr
High Power Infrared Emitting Diode
- Features:
Free air transmission system. Optoelectronic switch. Floppy disk drive. Infrared applied system. Smoke detector.
Applications:
The DL-HP20SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Descriptions: High reliability. High radiant intensity. Low forward voltage. Peak wavelength λp=850nm. The product itself will remain within RoHS compliant version.
1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED
CCTV
Wireless communication
Indoor Lighting
Outdoor Lighting
- Absolute Maximum Ratings at Ta=25
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Parameters Symbol Max. Unit Power Dissipation PD 2000 mW Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
IFP 1.50 A Forward Current IF 1000 mA Reverse Voltage VR 5 V Operating Temperature Range Topr -10 to +70 Storage Temperature Range Tstg -20 to +80 Soldering Temperature Tsld 260 for 5 Seconds Electrical Optical Characteristics at Ta=25
Parameters Symbol Min. Typ. Max. Unit Test Condition Radiant Intensity Ie 360 450 --- mW/Sr IF=1000mA Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1) Peak Emission Wavelength λp --- 850 --- nm IF=1000mA Spectral Bandwidth λ --- 40 --- nm IF=1000mA Forward Voltage VF 1.30 1.70 2.00 V IF=1000mA Reverse Current IR --- --- 50 µA VR=5V Notes:
1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
