Sic Based UV Photodiode UV Sensor

SG01D-5LENS
Concentrator lens SiC based UV photodiode Avirtual = 11.0 mm2

GeneraL Features

Properties of the SG01D-5LENS UV photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
• Radiation sensitive area A = 11.0 mm2
• TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10μW/cm2 peak radiation results a current of approx. 350 nA

About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible  blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV de-tectors. The SiC detectors can be permanently operated at up to 170℃ (338℉). The temperature coefficient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).

Options 
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermeti-cally sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further op-tion is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

Specifications