Yangzhou Genesis Microelectronics Co.,Ltd.

[Province: Jiangsu ]   

1N5819 Schottky Diode Wafer

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Specifications:
1) Size: 0.81mm x 0.81mm
2) P: 300mW
3) Io: 1A
4) VR: ≥40V
5) VF: ≤0.55V
6) IR: <1.2mA
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Mr. Qiu Jufen (manager)
Tel: 866-514-7953520
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Contact Method
Yangzhou Genesis Microelectronics Co.,Ltd.
269 Taiping Road, yangzhou, Jiangsu, China (Mainland) / 225003
Fax: 866-514-7953250
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